By Cher Ming Tan, Wei Li, Zhenghao Gan, Yuejin Hou
Applications of Finite aspect tools for Reliability reports on ULSI Interconnections offers a close description of the appliance of finite aspect tools (FEMs) to the research of ULSI interconnect reliability. over the last 20 years the applying of FEMs has turn into frequent and keeps to guide to an improved knowing of reliability physics.
To support readers deal with the expanding sophistication of FEMs’ functions to interconnect reliability, Applications of Finite point tools for Reliability reports on ULSI Interconnections will:
- introduce the primary of FEMs;
- review numerical modeling of ULSI interconnect reliability;
- describe the actual mechanism of ULSI interconnect reliability encountered within the electronics undefined; and
- discuss intimately using FEMs to appreciate and increase ULSI interconnect reliability from either the actual and useful viewpoint, incorporating the Monte Carlo method.
A full-scale evaluate of the numerical modeling method utilized in the learn of interconnect reliability highlights invaluable and memorable suggestions which have been constructed lately. Many illustrations are used through the ebook to enhance the reader’s knowing of the method and its verification. genuine experimental effects and micrographs on ULSI interconnects also are included.
Applications of Finite aspect tools for Reliability reviews on ULSI Interconnections is an effective reference for researchers who're engaged on interconnect reliability modeling, in addition to if you need to know extra approximately FEMs for reliability functions. It provides readers an intensive figuring out of the purposes of FEM to reliability modeling and an appreciation of the strengths and weaknesses of varied numerical types for interconnect reliability.
Read Online or Download Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections PDF
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Additional resources for Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections
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48] where the grain boundary diffusion was found to be as important as the interface diffusion, we use the temperature exponent of 4/3 for Eq. 74 eV as in the previous case, the critical temperature evaluated from Eq. 45 is around 255°C, in good agreement with the experimentally observed 250°C. For Al interconnects, Fischer et al. also reported the similar critical temperature for Al interconnects at slightly higher activation energy . 3 Vacancy and Atomic Migration Model SIV phenomenon occurs during storage test for long periods and is accelerated at high temperature storage.